About this role
SiC MOSFETs have been commercialized over the years in pursuit of lower on-resistance and higher switching performance but there are still some gate oxide related challenges related to material properties. Dynamic Gate Switching (DGS) instability is a phenomenon when a SiC MOSFET is switched in a bipolar mode (from a positive to a negative Vgs) and this leads to permanent shift of the threshold voltage (ΔV th ). This effect occurs during application conditions but can be observed also by using just a gate driver for the switching with the SiC MOSFET drain and gate shorted. Previous investigations into the DGS instability have mostly been limited to room temperature conditions. This Thesis work will involve understanding of this phenomenon as a function of temperature which might lead to creation of a test setup to enable these measurements. Characterization will be done both for packaged devices as well as on wafer level, and the Vth drift behaviour will be modeled.
Qualifications – External
Requirements:
To be considered for an internship, you must be currently enrolled in a degree seeking program. This position is specifically looking for someone who will be enrolled in [DEGREE PROGRAM].
Here at onsemi we take great pride in our internship program and the efforts we take to provide students with hands-on industry experience. We provide competitive pay medical benefits, various networking event opportunities, and flexible hours based on school schedule.